The phytochemical properties of the leaves extract including total phenolic content, total flavonoid content, and its active species were studied. AC leaves extract that acts as a reducing and stabilizing agent is capable of producing AgNPs without any agglomeration. These simulations provide the groundwork for our future experiments, which will be targeted on fabricating high mobility diodes and/or field effect transistors.Ībstract: Spherical silver nanoparticles (AgNPs) (5–15 nm) were synthesized by a simple electrochemical method at room temperature using Allium Cepa (AC) leaves extract. The simulation results showed a significant improvement in the electrical conduction properties of nn-heterojunction 4H-6H/SiC diodes after the inclusion of the armchair graphene nanoribbons.
The density of the states, charge carrier densities and current-voltage curves of the simulated devices have been computed. All of the simulations have been run using QuantumWise Atomistix Toolkit (ATK) software, which is an atomic scale electronic device simulator. For this purpose, simulations of a novel nn-heterojunction 4H-6H/SiC diodes with the inclusion of an armchair nanoribbon layer have been carried out. This article attempts to simulate electronic devices having SiC and graphene as their constituent materials. Electronic devices which have SiC and graphene as their constituent materials may combine the outstanding attributes of both materials.
Some of these polytypes (such as 4H-SiC, 6H-SiC and 3C-SiC) have exceptional physical and electrical properties. SiC has more than 250 different crystalline forms, these are called polytypes. Meanwhile silicon carbide (SiC), a wide bandgap semiconductor material, is being used for high temperature optoelectronic applications. These attributes make it highly suitable to develop electronic devices with ultra-high mobility of charge carriers. All these results indicate that bulks of (ZnS/Se) 0.4(Co) x(Ga 2O 3) 0.6-x are most promising materials in futureĪbstract: In recent years, graphene has sparked the interest of researchers due to its promising electrical and physical attributes. The optimal base material ZnSe was proved by AFM and OM. A broad application range from VIS to Mid-infrared was suggested by absorption spectra. Besides, the zinc-blende structure on ceramics targets was confirmed by XRD. All of the results are shown that the optimum doping concentration is (ZnS/Se) 0.4(Co) 0.5(Ga 2O 3) 0.1 (namely x=0.5), and the optimum intering temperature are in the range 1000~1200☌. XRD, absorption spectrum and AFM&OM were investigated. The mass loss rate, shrinkage rate and molar ration were calculated. In this paper, the ceramic targets of (ZnS/Se) 0.4(Co) x(Ga 2O 3) 0.6-x (x=0.1, 0.3 and 0.5) were prepared by high temperature solid state reaction. The Second harmonic generation efficiency of the crystal was estimated using NLO test and the efficiency was found to be 0.84 times that of UREA.Ībstract: The material of doping transition metal (TM) in chalcogenide compound such as ZnS and ZnSe can be used in sensors, nonlinear optics, optical thin-films and mid-infrared area because of their faster optical response time, wider transparency range of mid-infrared and higher mid-infrared transmittance, low optical loss and phonon energy. Thermal stability of the material was determined from TG/DTA test. Refractive index of the crystal was determined using Brewster’s angle method. UV-Visible spectrum shows that the crystal is transparent in the entire visible region. The crystal structure was studied by XRD method, which reveals that the compound crystallizes in Monoclinic crystal system with a space group P21/n and the corresponding lattice parameters are a = 7.595 (2) Å, b = 17.441 (4) Å, c = 10.917 (3) Å, α = 90 o, β = 102.500 (12) o, γ = 90 o. The FT-IR spectrum confirms the various functional groups present in the compound. Abstract: A novel NLO compound (E)-1-(5-chlorothiophene-2-yl)-3-(4-dimethylamino) phenyl) prop-2-en-1-one has been synthesized by adopting claisen schmidt condensation reaction method and the single crystals are grown using slow solvent evaporation technique.
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